| PART |
Description |
Maker |
| IKD04N60RFA |
Optimized Eon, Eoff and Qrr for low switching losses
|
Infineon Technologies A...
|
| IRFB4019PBF IRFB4019PBF-15 |
17 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low QRR for Better THD and Lower EMI
Low QRR for Better THD and Lower EMI
|
International Rectifier
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKB06N60HS SKB06N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKW20N60HS SKW20N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| APT30D100SG APT30D100B APT30D100B_05 APT30D100BG A |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 30; VR (V): 1000; trr (nsec): 29; VF (V): 1.9; Qrr (nC): 2350; 30 A, 1000 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 1000; trr (nsec): 29; VF (V): 1.9; Qrr (nC): 2350;
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
|
| APT15S20K APT15S20KG |
HIGH VOLTAGE SCHOTTKY DIODE
Schottky Discrete RECTIFIER; Package: TO-220 [K]; VR (V): 200; IO (A): 25; VF (V): 0.8; trr (nsec): 20; Qrr (nC): 440;
|
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| SI4884DY |
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET 0.01 ohm, Si, POWER, FET
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| IXGA12N120A2 |
IGBT Optimized
|
IXYS Corporation
|
